2.2 μm InGaAsSb/AlGaAsSb laser diode under continuous wave operating at room temperature

2.2 μm InGaAsSb/AlGaAsSb Sb-based type-I laser diodes (LDs) were fabricated, with cavity lengths of 1000 μm and stripe width of 150 μm. The high output performance was achieved with the threshold current density of the device is as low as 187 A/cm 2 , slope efficiency of 0.2 W/A, and vertical and parallel divergent angles ϑ ⊥ = 42° and ϑ | = 10°, respectively. The continuous wave operating up to 320 mW at room temperature (RT) were achieved.