Monte Carlo Study of Ambipolar Transport and Quantum Effects in Carbon Nanotube Transistors

Huu Nha Nguyen,Sylvie Retailleau,Damien Querlioz,Arnaud Bournel,Philippe Dollfus

San Diego, CA（2009）

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摘要

In this paper, we investigate the device operation of CNFETs using Monte Carlo simulation. Two types of contacts (ohmic and Schottky) are considered and the effect of ambipolar transport with Schottky barriers is analysed. We also discuss the actual influence of quantum effects on the basis of Wigner simulation results. The output and high-frequency characteristics of different structures are presented and discussed.

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关键词

ambipolar,ohmic contact,ambipolar transport,ohmic contacts,quantum effects,schottky contact,wigner simulation,monte carlo study,field effect transistors,monte carlo methods,quantum effect.,carbon nanotubes,c,elemental semiconductors,carbon nanotube transistor,carbon nanotube field effect transistors,-monte carlo simulation,schottky barriers,schottky barrier,logic gates,quantum effect,high frequency,monte carlo simulation,mathematical model,carbon nanotube

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