An analytical model for negative bias temperature instability
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings（2006）
摘要
Negative Bias Temperature Instability (NBTI) in PMOS transistors has become a significant reliability concern in present day digital circuit design. With continued scaling, the effect of NBTI has rapidly grown in prominence, forcing designers to resort to a pessimistic design style using guard-banding. Since NBTI is strongly dependent on the time for which the PMOS device is stressed, different gates in a combinational circuit experience varying extents of delay degradation. This has necessitated a mechanism of quantizing the gate-delay degradation, to pave the way for improved design strategies. Our work addresses this issue by providing a procedure for determining the amount of delay degradation of a circuit due to NBTI. An analytical model for NBTI is derived using the framework of the Reaction-Diffusion model, and a mathematical proof for the widely observed phenomenon of frequency independence is provided. Simulations on ISCAS benchmarks under a 70nm technology show that NBTI causes a delay degradation of about 8% in combinational logic based circuits after 10 years (≈ 3 x 108s).
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关键词
analytical model,reaction-diffusion model,digital circuit design,combinational circuit experience,pmos device,improved design strategy,delay degradation,negative bias temperature instability,pmos transistor,pessimistic design style,gate-delay degradation,manufacturability,performance,combinational circuit,reaction diffusion model,reaction diffusion,integrated circuit design,combinational circuits,logic gates,vlsi,digital circuits,threshold voltage
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