Photoresists comparative analysis using soft X-ray synchrotron radiation and time-of-flight mass spectrometry

Positive photoresists are widely used in lithographic process for the fabrication of relief components. When exposed to UV radiation they suffer chemical reactions modifying their chemical and physical properties. Aiming to follow molecular modifications among two different photoresists unexposed and previously exposed to ultraviolet light we have employed spectroscopic techniques coupled with mass spectrometry in the study of the AZ-1518 and AZ-4620 photoresists. The photon stimulated ion desorption (PSID) technique following the S K-edge NEXAFS spectrum was employed at the brazilian synchrotron light source (LNLS), during single-bunch operation and using time-of-flight mass spectrometry (TOF-MS) for ion analysis. NEXAFS and PSID mass spectra on both AZ-1518 and AZ-4620 photoresists (unexposed and exposed) were obtained and relative desorption ion yield curves determined for the main fragments as a function of the photon energy. They present marked different PSID spectra. Fragments related to the photochemical decomposition of the AZ-1518 photoresist could be clearly identified differently from the AZ-4620. Studies on the hardness of both photoresists were performed using O2 plasma reactive ion etching (RIE) technique, analyzed by scanning electron microscopy (SEM) and used to explain different desorption yields in the PSID spectra. These results show that the PSID technique is adequate to investigate structural changes in molecular level in different unexposed and exposed photoresists, which is crucial for improving our knowledge about the breakup process.