Implementation of diode and bipolar triggered SCRs for CDM robust ESD protection in 90 nm CMOS ASICs

Ciaran J. Brennan,Shunhua Chang,Min Woo,Kiran V. Chatty,Robert Gauthier

Microelectronics Reliability（2007）

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摘要

We report the characterization of diode and bipolar triggered SCRs with VFTLP measurements and product ESD testing. A dual base Darlington bipolar triggered SCR (DbtSCR) in a triple well structure is demonstrated to provide 4kV HBM, 300V MM, and 1000V CDM protection for 90nm ASIC I/Os. A very fast turn-on time of 460ps was measured for the DbtSCR, compared to 8ns for a diode triggered SCR.

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关键词

CMOS integrated circuits,application specific integrated circuits,electrostatic discharge,thyristors,trigger circuits,CDM robust ESD protection,CMOS ASIC process,Darlington bipolar-triggered SCR,VFTLP measurement,diode-triggered SCR,size 90 nm,time 460 ps,

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