Rashba Effect Resonant Tunneling Spin Filters

Proceedings of the IEEE(2003)

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摘要
We propose an InAs/GaSb/AlSb-based asymmetric resonant interband tunneling diode (a-RITD) as a spin filter The device exploits the Rashba effect to achieve spin polarization under zero magnetic field using nonmagnetic III-V semiconductor heterostructures. We discuss the basic principles of the interband tunneling spin filter and present modeling results that demonstrate its advantage. We also propose an implementation procedure for realizing device structure.
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关键词
interband tunneling,Rashba effect,resonant tunneling,spin filter
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