Estimation of fast transient current degradation analyzed by non-ionizing energy loss

In recent years, special interests have been paid to the advantage of using III–V compound semiconductors for the microelectronic and optoelectronic industries because of its high-speed response. Ion beam induced charge (IBIC) and transient-IBIC techniques are useful in order to investigate the single event effects, which is one of the most serious problems to use semiconductor devices in space. During image collection, the ion-induced damage is introduced. Therefore the degradation behavior of collected charge and transient current are important issue to use these techniques most effectively. To estimate degradation behavior, the damage factors of InGaAs devices are compared with that of Si devices by using the concept of non-ionizing energy loss.