Impact ionization and transport in the InAlAs/n/sup +/-InP HFET

David R. Greenberg,Jeslis A. del Alamo,Rajaram Bhat

IEEE Transactions on Electron Devices（1995）

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摘要

We have carried out an experimental study exploring both impact ionization and electron transport in InAlAs/n/sup +/-InP HFET's. Our devices show no signature of impact ionization in the gate current, which remains below 17 /spl mu/A/mm under typical bias conditions for L/sub g/=0.8 /spl mu/m devices (60 times lower than for InAlAs/InGaAs HEMT's). The lack of impact ionization results in a drain-s...

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关键词

Impact ionization,Indium compounds,HEMTs,MODFETs,Indium phosphide,Electrons,Photodiodes,Optical receivers,Voltage,Degradation

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