A Channeling Rbs Study Of Soi Structures By Simox Using Mev Ions

Silicon-on-insulator (SOI) structures, formed by implanting n-type <100> silicon substrates with 3 x 10(17), 6 x 10(17) and 8 x 10(17) O2+ ions cm-2 at 6 MeV, have been characterized by channeling/Rutherford backscattering spectroscopy (RBS). An amorphous buried layer was formed about 4-mu-m from the surface. In the as-implanted samples, the Si overlayer was damaged from the surface to the buried layer, but still monocrystalline. After annealing at 1300-degrees-C for 2 h, the crystal structure is restored from the surface to a depth around 3.2-mu-m. RBS spectra showed that samples annealed at 1300-degrees-C for 6 h exhibited narrower oxygen distributions than those annealed at 1240-degrees-C for longer time (13 h). For the largest dose (8 x 10(17) ions cm-2), a nearly stoichiometric oxide layer was formed after annealing at 1300-degrees-C for 6 h.