Comparison Of Low-Frequency Noise In Channel And Gate-Induced Drain Leakage Currents Of High-K Nfets

The random telegraph noise in the gate-induced drain leakage (GIDL) and channel currents of nanoscale high-k nMOSFETs was analyzed and compared systematically. The capture and emission probabilities of the carriers were analyzed in terms of the gate voltage and the temperature. Both emission time (tau(e)) and capture time (tau(c)) in the channel current have a dependence on V-GS. However, tau(e) in the GIDL current is independent of V-GS but strongly dependent on the temperature since tau(e) is decreased more significantly with increasing temperature than tau(c). As V-GS increases, tau(c) in the GIDL current increases.