Extraction of SiN− ions from source of negative ions by cesium sputtering

X.M. Wang,J.R. Liu,L. Shao,K.B. Ma,H. Chen,X.K. Yu,W.K. Chu

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS（2005）

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摘要

We investigated the production of SiN- ions from a source of negative ions by cesium sputtering (SNICS) ion source. Currents up to 17 mu A were obtained by optimizing the operation parameters such as the cathode voltage, ionizer current, temperature of the cesium reservoir and fine turning the focussing system. Damage and damage annealing of low energy SiN- implanted in silicon are also studied and reported in this presentation. (c) 2005 Elsevier B.V. All rights reserved.

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SiN- ions,source of negative ions by cesium sputtering

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