Investigation of Body Bias Dependence of Gate-Induced Drain Leakage Current for Body-Tied Fin Field Effect Transistor

The body bia: dependence of gate-induced drain leakage (GIRL) current for a fin field effect transistor fabricated on a bulk Si wafer (bulk FinFET) is investigated. The local damascene (LD) bulk FinFET is measured under various bias conditions and the effect of the body-bias-induced lateral electric field oil GIDL current is evaluated. A lateral elcctric field shield effect under fin depleted condition is proposed and it is validated by the three-terminal band-to-band tunneling current model. The GIRL current of the bulk FinFET call be reduced by reducing the body bias, and an improvement in retention characteristics is expected.