Temperature dependence of current–voltage characteristics of terahertz quantum-well photodetectors

We have performed current-voltage (I-V) measurements on a terahertz quantum-well photodetector (QWP) at different temperatures and employed an emission-capture model to simulate the I-V curves. A temperature-dependent vertical electron drift mobility has been used to fit the curves from 7 K to 20 K. Photocurrents caused by 300 K background radiation have also been measured at different temperatures and a background-limited infrared performance (blip) temperature of 12 K for this terahertz detector has been determined. The current-temperature (I-T) curves derived from the measured dark I-V curves indicate that the thermionic emission process is the major mechanism for dark current in this terahertz detector.