A multi-purpose Schrödinger-Poisson Solver for TCAD applications

Journal of Computational Electronics(2007)

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摘要
We present the Vienna Schrödinger-Poisson Solver (VSP), a multi-purpose quantum mechanical solver for investigations on nano-scaled device structures. VSP includes a quantum mechanical solver for closed as well as open boundary problems on fairly arbitrary one-dimensional cross sections within the effective mass framework. For investigations on novel gate dielectrics VSP holds models for bulk and interface trap charges, and direct and trap assisted tunneling. Hetero-structured semiconductor devices, like resonant tunneling diodes (RTD), can be treated within the closed boundary model for quick estimation of resonant energy levels. The open boundary model allows evaluation of current voltage characteristics.
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关键词
Simulation,Schrödinger-Poisson solver,Quantum transport,Nanoelectronic devices
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