Antiferroelectric PbZrO3 thin films: structure, properties and irradiation effects

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY(2004)

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摘要
Irradiation effects on highly oriented antiferroelectric PbZrO3 and ferroelectric Pb0.92La0.08(Zr0.65Ti0.35)O-3 thin films are investigated being exposed to neutron irradiation up to fluence 2*10(22) m(-2). The higher resistance of antiferroelectric PbZrO3 thin films as compared to ferroelectric hetero structures to large fluences of neutron irradiation is recognized and discussed. Influence of two factors (structural and charge) was,taken into account analysing irradiation effects on materials of different polarization states: ferroelectric PLZT (ceramics and thin films) and antiferroelectric PbZrO3 films. (C) 2003 Elsevier Ltd. All rights reserved.
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关键词
antiferroelectric and ferroelectric thin films,dielectric properties,neutron irradiation,oxygen vacancies,radiation-induced charges
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