Precise Depth Control and Low-Damage Atomic-Layer Etching of HfO2 using BCl3 and Ar Neutral BeamS. D. Park,W. S. Lim,B. J. Park,H. C. Lee,J. W. Bae, G. Y. Yeomamsra引用 28|浏览4暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
