Force probe characterization using silicon three-dimensional structures formed by focused ion beam lithography

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B(1994)

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摘要
The creation of a localized etch stop by focused ion beam implantation of Ga+ into Si combined with selective material removal by sputtering has been used to produce submicron size three‐dimensional structures. These funnellike structures have been used to characterize probes used in atomic force microscopy.
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关键词
focused ion beam
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