Charging effects in passivated silicon detectors

D.S. Bracken,K. Kwiatkowski,K.B. Morley,E. Renshaw Foxford,K. Komisarcik,A.J. Rader,V.E. Viola

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment（1995）

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摘要

Ion-implanted passivated silicon detectors undergo a gradual, then rapid increase in leakage current when exposed to ionizing radiation in the presence of gas between 5–200 Torr. Conditions for generating this effect are discussed and a mechanism is proposed to explain this behavior. Methods for preventing this effect and for recovering detectors damaged in this way are presented.

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关键词

ionizing radiation,leakage current,ion implantation

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