Phoenix: Reviving Mlc Blocks As Slc To Extend Nand Flash Devices Lifetime

Xavier Jimenez,David Novo,Paolo Ienne

DATE '13: Proceedings of the Conference on Design, Automation and Test in Europe(2013)

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摘要
On a Multi-Level Cell (MLC) flash memory, a flash block that is becoming unreliable to store multiple bits per cell can be "revived" by storing only a single bit per cell. While the revived-block capacity is halved, its lifetime is significantly extended without jeopardizing the stored data. We present Phoenix, a technique that benefits from this feature to extend a device lifetime, and we evaluate its potential through detailed trace simulation on realistic benchmarks. Phoenix shows systematic lifetime extensions ranging from 3% up to 17%, without extra memory requirements or performance loss.
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关键词
device lifetime,systematic lifetime extension,extra memory requirement,flash block,flash memory,Multi-Level Cell,detailed trace simulation,multiple bit,performance loss,realistic benchmarks,MLC block,NAND flash devices lifetime
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