A novel SOI lateral-power MOSFET with a self-aligned drift region

A novel drift-region self-aligned SOI lateral-power MOSFET using a partial exposure technique is proposed and demonstrated for RF power amplifier applications. The drift self-aligned structure was achieved using a simple process and without the need of an additional mask. Furthermore, the drift length can be controlled conveniently using different layout designs. The fabricated SOI power device has a breakdown voltage of over 20 V. Using a 0.7-μm nonsilicide technology, the cutoff frequency (fT) and maximum oscillation frequency (fmax) of the device are 10.1 and 13.7 GHz, respectively.