Reduced temperature sensitivity of lasing wavelength in near-1.3 [micro sign]m InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer

An InGaAs strain-reducing capping layer with a stepped composition is shown to significantly reduce the temperature sensitivity of the lasing wavelength in a 1.3 mum InAs/GaAs quantum-dot laser. With this technique, the sensitivity is reduced from 0.48 nm/K for a laser with standard capping layer to 0.11 nm/K for the new design over the temperature range 20-130degC