Properties of TiO2 Thin Films on InP Substrate Prepared by Liquid Phase Deposition

The deposition of TiO2 films on InP substrate is studied by liquid phase deposition (LPD) with H2TiF6 and H3BO3 as the starting materials at the growth temperature of 75degreesC. The growth rate of TiO2 is about 42 Angstrom/min. The surface morphology of the TiO2 films was mirror-like. The film stoichiometry was measured by energy dispersion spectroscopy (EDS). The refractive index of TiO2 films measured by ellipsometry reached 1.6. The structure of TiO2 is polycrystalline as determined by X-ray diffraction examination. From current-voltage measurement of the Al/TiO2/InP structure, the leakage current is 1 x 10(-5) A/ cm(2) under the electric field intensity of 0.12 MV/cm.