Synthesis and characteristics of Na-doped Bi4Ti3O12 thin films on Si substrate

Bi3.25Na2.25Ti3O12 thin films were prepared on p-Si(111) substrate by a metalorganic solution decomposition (MOSD) method. The structural characteristic and crystallization of the films were examined by X-ray diffraction. The current–voltage characteristic shows ohmic conductivity in the lower voltage range and space-charge-limited conductivity in the higher voltage range. The dielectric constant is 53 at a frequency of 100kHz at room temperature and the dissipation factor exists at a minimal value of 0.02 at a frequency of 200kHz. The retention time estimated by measuring capacitance is about 106s. Nonhysteretic C–V curves at various frequencies were also collected.