A flexible logic circuit based on a MOS-NDR transistor in standard CMOS technology

A MOS-NDR(negative differential resistance) transistor which is composed of four n-channel metaloxide -semiconductor field effect transistors(nMOSFETs) is fabricated in standard 0.35μm CMOS technology.This device exhibits NDR similar to conventional NDR devices such as the compound material based RTD(resonant tunneling diode) in current-voltage characteristics.At the same time it can realize a modulation effect by the third terminal. Based on the MOS-NDR transistor,a flexible logic circuit is realized in this work,which can transfer from the NAND gate to the NOR gate by suitably changing the threshold voltage of the MOS-NDR transistor.It turns out that MOS-NDR based circuits have the advantages of improved circuit compaction and reduced process complexity due to using the standard IC design and fabrication procedure.