Electrical Characterization of Wafer-Bonded Germanium-on-Insulator Substrates Using a Four-Point-Probe Pseudo-Metal–Oxide–Semiconductor Field-Effect Transistor
Japanese Journal of Applied Physics（2011）
关键词
pseudo-metal–oxide–semiconductor,electrical characterization,wafer-bonded,germanium-on-insulator,four-point-probe,field-effect
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