Comparison of radiation damage in silicon detectors induced by pions, protons and neutrons
Nuovo Cimento Della Societa Italiana Di Fisica A-nuclei Particles and Fields(2007)
摘要
Summary High-resistivity silicon detectors have been irradiated, respectively, with neutrons, protons and pions; fluences between
1·1012 and 4·1013 particles/cm2 were attained. Measurements ofI-V, C-V characteristics and Thermally Stimulated Current (TSC) analyses were performed before and after irradiation in order to monitor
electrical and lattice damage induced by irradiation with different particles. Electrical degradation parameters have been
determined; energy levels and concentrations of main radiation-induced defects have been attained by TSC analysis. Results
show that different particles irradiation introduce mainly the same energy levels of induced traps in the bulk. An increase
in concentration of the same kind of point defects with fluence has been also observed for the different irradiation particles.
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关键词
radiation damage,energy levels
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