4096 bit and larger bipolar static random access memories

A description of a new 4096 bit, 600mw, 25ns, TAA static TTL RAM with a 2.3 mil 2 cell and a 17,200 mil 2 die is presented. The evolution of static bipolar RAMs is discussed along with an analysis of the power allocation of the current 600mW 4096 bit device. The use of PNP memory cell load devices and Darlington word drivers will lower overhead power leading to substantially reduced total device power. An analysis of static RAM die vs. photo-lithography feature size is presented to extrapolate the die size and performance to 16K and 65K static bipolar RAMs.