Effects of 3 MeV proton irradiation on the excitonic lifetime in gallium arsenide

Gallium arsenide films grown by the metalorganic chemical vapour deposition method and doped n-type with silicon to concentrations of 2/spl times/10/sup 15/ and 2/spl times/10/sup 16/ cm/sup -3/ were exposed at room temperature to 3 MeV proton irradiation in the fluence range 10/sup 9/ to 10/sup 14/ cm/sup -2/. The photoluminescence spectra of the irradiated samples were obtained in the continuous...