Formation of polycrystalline silicon films on glass substrates at low-temperatures by a direct negative Si ion beam deposition system

We have constructed a direct metal ion beam deposition (DMIBD) system, which consists of a primary cesium ion source and a negative ion source. The Si− ion current and deposition energy can be controlled independently and precisely, which are the major advantages of DMIBD system. Poly-Si films were deposited on a glass substrate at a temperature of 200–500°C with ion beam energy from 10 to 100eV by a direct metal ion beam deposition (DMIBD) system. The deposition of poly-Si films at low temperatures can be explained by a kinetic bonding process. Transmission electron microscope images show the capability of grain size control by adjusting the ion beam energy. The resistivity is very low and it is also considered that in situ doping was performed during the deposition of the silicon films by this technique.