Low-noise, low-power monolithically integrated active 20 GHz mixer in SiGe technology

S. Hackl,T. F. Meister,M. Wurzer,H. Knapp,K. Aufinger,L. Treitinger,A. L. Scholtz

Electronics Letters（2001）

引用 11|浏览6

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摘要

A monolithically integrated active broadband mixer for wireless communications in a 0.5 /spl mu/m 80 GHz f/sub T/ SiGe bipolar technology is presented. The circuit is optimised for low-noise and low-power consumption and operates up to 20 GHz with a conversion gain >10 dB consuming only 9 mW from a single 4.5 V supply.

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关键词

Ge-Si alloys,semiconductor materials,MMIC mixers,bipolar MMIC,low-power electronics,integrated circuit noise

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