Stress Liner Effects for 32-nm SOI MOSFETs With HKMG

Ming Cai,Karthik Ramani,Michael Belyansky,Brian Greene,Doug H. Lee,Stephan Waidmann,Frank Tamweber,William Henson

Electron Devices, IEEE Transactions（2010）

引用 24|浏览48

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摘要

Strain effects from stress liners on silicon-on-insulator MOSFETs with high-k dielectric and metal gate (HKMG) are reported. By thoroughly evaluating their impact on drive current, mobility, and threshold voltage, the intrinsic performance gain of stress liners is quantified at the 32-nm node with mobility enhancement identified as the major source. It is also experimentally demonstrated that advantageous stress liners can reduce gate leakage currents for MOSFETs with HKMG.

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关键词

mobility enhancement,soi mosfet,stress liner effect,strained silicon,leakage currents,high-k dielectric,metal gate,high-$k$,gate leakage current,silicon-on-insulator,mosfets,size 32 nm,threshold voltage,hkmg,stress nitride,mosfet,drive current,strain effect,leakage current,dsl,cmos technology,capacitive sensors,high k,high k dielectric,compressive stress,tensile stress,silicon on insulator

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