Evaluation of carbon incorporation and strain of doped MgB2 superconductor by Raman spectroscopy

Scripta Materialia(2011)

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摘要
Raman spectroscopy is employed to study both the strain and the carbon substitution level in SiC-doped MgB2 bulk samples. Raman spectroscopy was demonstrated to be a better method to distinguish the individual influences of strain and carbon than standard X-ray diffraction. It is found that the lattice parameter correlation method for C content determination is invalid for highly strained samples. Our result also provides an alternative explanation for lattice variation in non-carbon-doped MgB2, which is basically due to lattice strain. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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关键词
Raman spectroscopy,X-ray diffraction,Superconductors,Carbon doping
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