Band gap engineered resistor for mitigating linear energy transfer sensitivities in scaled submiron CMOS technology SRAM cells

Use of cross-coupling latch resistors is a prime method of mitigating single event upsets (SEU). Scaling has dramatically reduced ability of using this technique because of the large area needed as well as high temperature coefficient of resistance (TCR) of lightly doped polysilicon resistors. We present results of a study of the electrical properties of Al1−xInxN films resistor which offers distinct advantage over polysilicon resistors. The films were grown on silicon nitride by magnetron sputter deposition at room temperature. Sheet resistance in the range of 8–10kΩ/□ was reproducibly grown. The resistor film is thermally stable with TCR of less than minus 0.09%/°C for temperature range of minus 55°C to +125°C.