Demonstration of 184 and 255-GHz Amplifiers Using InP HBT Technology

V. Radisic,D. Sawdai,D. Scott,W. R. Deal,Linh Dang,D. Li,A. Cavus,A. Linh Dang,L. Samoska,R. To,T. Gaier,R. Lai

IEEE Microwave and Wireless Components Letters（2008）

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摘要

In this letter, 184 and 255 GHz single-stage heterojunction bipolar transistor (HBT) amplifiers are reported. Each amplifier uses a single-emitter 0.4 mu m x 15 mu m InP HBT device with maximum frequency of oscillation (f(max)) greater than 500 GHz and f(T) of similar to 200 GHz. The 183 GHz single-stage amplifier has demonstrated gain of 4.3 +/- 0.4 dB for all sites on the wafer. The 255 GHz amplifier has measured gain of 3.5 dB and demonstrates the highest frequency measured HBT amplifier gain reported to date. Both amplifiers show excellent agreement with original simulation.

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关键词

amplification,amplifiers,heterojunction bipolar transistors,indium compounds,wafer-scale integration,InP HBT technology,amplifier gain,frequency 183 GHz,frequency 184 GHz,frequency 255 GHz,gain 3.5 dB,single-stage heterojunction bipolar transistor amplifiers,wafer,Amplifier,MM-Wave,heterojunction bipolar transistor (HBT),monolithic microwave integrated circuit (MMIC),sub-millimeter wave

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