The effects of base dopant diffusion on DC and RF characteristics of InGaAs/InAlAs heterojunction bipolar transistors

M. Hafizi,R. A. Metzger,W. E. Stanchina,D. B. Rensch,J. F. Jensen,W. W. Hooper

IEEE Electron Device Letters（1992）

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摘要

The effects of base p-dopant diffusion at junction interfaces of InGaAs/InAlAs HBT's with thin base thicknesses and high base dopings are reported. It is shown that HBT's with compositionally graded emitter-base (E-B) junctions are very tolerant to base dopant outdiffusion into the E-B graded region. The RF performance is nearly unaffected by the diffusion and the dc current gain and E-B junction breakdown voltage are improved with finite Be diffusion into the E-B graded region.

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关键词

III-V semiconductors,aluminium compounds,diffusion in solids,gallium arsenide,heterojunction bipolar transistors,indium compounds,semiconductor device testing,solid-state microwave devices,DC current gain,HBTs,InGaAs-InAlAs,RF characteristics,base dopant diffusion,breakdown voltages,collector current,compositionally graded emitter base junctions,finite Be diffusion,heterojunction bipolar transistors,high base dopings,thin base thicknesses

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