Cathodoluminescence and Photoluminescence Characterisation of Etched Mesas of ZnTe/ZnMgTe Quantum Wells under Tensile Strain

S. Dassonneville,Y.-M. Niquet,B. Sieber,H. Mariette

Solid State Phenomena（1998）

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摘要

An optical characterisation by means of cathodoluminescence and photoluminescence has been undertaken on ZnTe/Zn0.8Mg0.2Te quantum wells under tension which were epitaxially grown by MBE on a ZnTe substrate. Nanolithography and ion beam etching were used to produce mesas of quantum wells, The origin of spatial variations of the QWs luminescence peaks is analyzed in terms of ZnMgTe buffer strain fluctuations.

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关键词

II-VI compounds,relaxation,tensile strain,correlation

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