0.13 $\mu$ m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications

IEEE Journal of Solid-State Circuits（2009）

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摘要

This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission lines and inductors, 2 fF/μm2 high-linearity MIM capacitor and complementary double gate oxide MOS transistors. Details are given on HBT integration, ...

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关键词

Silicon germanium,Germanium silicon alloys,Heterojunction bipolar transistors,BiCMOS integrated circuits,Millimeter wave technology,Millimeter wave transistors,Medium voltage,Transmission lines,Inductors,MIM capacitors

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