A way to 0.1 micron by 1:1 SR lithography

Microelectronic Engineering(1992)

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摘要
The dimensional accuracy of a mask and resolution capability of 1:1 SR lithography for 0.1 μm scaling is investigated. The mask-to-mask overlay is less than the measurement accuracy (0.04 μm, 3σ) for two X-ray masks fabricated from the stress controlled SiN membrane and W absorber. 1:1 SR proximity printing is capable of 0.1 μm resolution by adjusting the exposing SR wavelength just over the Si-K edge and reducing the mask-wafer gap to 10 μm.
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