Contactless Monitoring Of Si Substrate Permittivity And Resistivity From Microwave To Millimeter Wave Frequencies

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS(2010)

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摘要
A contactless and nondestructive technique is employed for characterizing single-sided metallised silicon wafers. The reflection spectra Ore measured using a quasi-optical millmeter-wave setup in the frequency range 40-320 GHz. The results are compared with those provided by the coplanar wave guide method, in terms of accuracy and range of applicability. (C) 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2500-2505, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25524
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关键词
semiconductors, silicon, resistivity measurement, quasi-optical, nondestructive extraction method
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