Realization of InAlN/GaN Unstrained HEMTs on SiC Substrates with a 75 Å Barrier Layer J. K. Gillespie, G. H. Jessen, G. D. Via, A. Crespo, and D. Langley Sensors Directorate, Air Force Research Laboratory Wright-Patterson Air Force Base, OH 45433

In this work, we describe the first reported unstrained InAlN/GaN HEMT on SiC with a 7.5 nm barrier thickness. The device reported has a gate length of 250 nm and demonstrated I max = 861 mA/mm, g mp = 355 mS/mm, f t = 43 GHz, and f max(MAG) = 66 GHz. Power measurements for a 7.5 nm barrier device with a 250 nm gate resulted in 2.0 W/mm, 29.3% Peak PAE at X- band.