Recrystallization of Si films on thermal SiO2-coated Si substrates using a high-speed e-beam line source

D. B. Rensch, J. Y. Chen,D. B. Rensch, J. Y. Chen

IEEE Electron Device Letters（1984）

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摘要

Lateral zone melting from a fast-scanning (5-30-cm/s) e-beam line source has been used to grow single-crystal films with an area limited only by the e-beam scan field. Electron backscattering contrast and etch pit techniques have been used to study the crystallographic orientation and the extent of single-crystal silicon film growth on thermal SiO2-coated silicon (SOI) wafers.

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关键词

Semiconductor films,Substrates,Silicon,Etching,Heating,Electron beams,Backscatter,Area measurement,FETs,Frequency measurement

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