Influence of metallic tubes on the reliability of CNTFET SRAMs: error mechanisms and countermeasures.

Carbon nanotubes (CNTs) are considered as a possible successor to the CMOS technology. The adoption of these nanodevices for designing large VLSI systems, however, is limited by the unreliable manufacturing process. In this paper, we investigate the possibility of using CNTFETs to build SRAM arrays. We analyze the error mechanisms and show how stuck-at faults and pattern sensitive faults are caused by metallic tubes in different transistors of a 6-T SRAM cell. The results indicate the need of stronger error detecting codes than the widely used single-error-correcting, double-error-detecting codes in CMOS SRAMs.