Explanation of P/E Cycling Impact on Drain Disturb in Flash EEPROMs Under CHE and CHISEL Programming Operation

D. R. Nair,S. Mahapatra,S. Shukuri,J. Bude

IEEE Transactions on Electron Devices（2005）

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摘要

The impact of program/erase (P/E) cycling on drain disturb in NOR Flash EEPROM cells under channel hot electron (CHE) and channel-initiated secondary electron (CHISEL) programming operation is studied. Charge gain disturb increases and charge loss disturb decreases after cycling under CHE and CHISEL operation. Carefully designed experiments and fullband Monte Carlo simulations were used to explain...

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关键词

Hot carriers,Monte Carlo methods,Leakage currents,Tunneling,Semiconductor device modeling

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