Proton Beam Characterization at Oslo Cyclotron Laboratory for Radiation Testing of Electronic Devices
2013 IEEE 16th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)（2013）
关键词
CMOS integrated circuits,calibration,cyclotrons,dosimetry,integrated circuit measurement,integrated circuit reliability,integrated circuit testing,low-power electronics,proton beams,proton effects,radiation hardening (electronics),OCL,Oslo Cyclotron Laboratory,beam profile measurement setup,beam property evaluation,beam-to-target alignment,calibration setup,dosimetry measurement,electron volt energy 30 MeV,electronic device,low power CMOS device,proton beam characterization,radiation tolerance testing,reliability
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