Highest efficiency, linear X-band performance using InP DHBTs - 48% PAE at 30 dB C/IM3

L. Kehias,T. Jenkins,T. Quach,P. Watson,R. Welch, R. Worley,A. K. Oki, H. C. Yen,A. Gutierrez-Aitken,W. Okamura,E. Kaneshiro

IEEE Microwave and Wireless Components Letters（2001）

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摘要

InP single heterojunction bipolar transistors have previously demonstrated 5-10 dB lower third-order intermodulation products (IM3) compared to GaAs heterojunction bipolar transistors (HBTs) under low voltage (2 V) operation. This paper reports excellent single-tone and two-tone X-band operation, including high two-tone power-added efficiency (PAE), on linear InP double heterojunction bipolar tran...

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关键词

Indium phosphide,Double heterojunction bipolar transistors,Heterojunction bipolar transistors,Power generation,Power amplifiers,Gallium arsenide,Low voltage,Microwave devices,Microwave amplifiers,Radiofrequency amplifiers

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