Nitridation of Si(111) for growth of 2H-AlN(0001)/β-Si3N4 /Si(111) structure
Journal of Crystal Growth(2009)
摘要
Using various nitrogen active species with different chemical and physical activities, nitridation of Si(111) was studied for the growth of group III nitrides and their alloys using a radio frequency molecular beam epitaxy. Nitrogen inductive coupling discharge produced dissociated active nitrogen atoms (N+N*), which are ground state atom N and excited atom N*, excited molecules N2*, and molecule ions N2+. The surface morphology of β-Si3N4 was affected by the kind of nitrogen species. Flat surface was obtained by using only (N+N*) with slow nitridation of 0.02ML/s. When nitridation was performed by (N+N*) and N2*, many steps and many 10nm height spikes were observed. It was essential for nitridation to eliminate nitrogen ions (N2+). In comparison with this result, when N2* were used, the island size of β-Si3N4 became bigger without detachment from upper terrace. This island size affected successive surface structure of AlN. It is a key technique to achieve flat surface of β-Si3N4 that N+N* flux was used for nitridation. The growth of 2H-AlN(0001)/β-Si3N4/Si(111) structure was also performed. RMS value of AlN grown on β-Si3N4 which was formed by (N+N*) became 0.88nm.
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关键词
81.05.Ea,81.15.Hi,52.50.Dg
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