Soft X-Ray Emission Spectroscopic Analysis of Pt Silicides ($\bf Pt_{2}Si$, PtSi)

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS(1994)

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摘要
We have studied the partial valence band density of states (VB-DOS) of Pt-silicides by using soft X-ray emission spectroscopy (SXES). Si Kbeta emission spectra of Pt2Si and PtSi provide information on the gi p partial VB-DOS, showing the clear bonding and antibonding states. The contribution of Si s and/or d states to the upper part of VB-DOS has also been observed from the Si L2,3 emission spectra of Pt2Si and PtSi. Such a contribution of the Si s and/or d state to the upper part of the VB-DOS has not been predicted by previous theoretical studies.
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关键词
PT-SILICIDE,HETEROCONTACT,ELECTRONIC STRUCTURE,SORT X-RAY EMISSION,VALENCE BAND DENSITY OF STATES
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