Numerical Study of Flicker Noise in p-Type $ \hbox{Si}_{0.7}\hbox{Ge}_{0.3}/\hbox{Si}$ Heterostructure MOSFETs

Device-level simulation capabilities have been developed to investigate low-frequency noise behavior in p-type Si0.7Ge0.3/Si heterostructure MOS (SiGe p-HMOS) transistors. The numerical model is based on the impedance field method; it accounts for a trap-induced carrier number fluctuation, a layer-dependent correlated mobility fluctuation, and a Hooge mobility fluctuation in the buried and parasit...