Effect of Mn doping on the microstructures and dielectric properties of Bi3.15Nd0.85Ti3O12 thin films

Mn-doped Bi3.15Nd0.85Ti3O12 (BNT), i.e., Bi3.15Nd0.85Ti3−xMnxO12 (BNTM, x=0, 0.005, 0.01, 0.03, 0.05, and 0.1) thin films with bismuth-layered perovskite structure were prepared on Pt/Ti/SiO2/Si(100) substrates by a chemical solution deposition method at 700 °C. The crystal structures of BNTM films were analyzed by X-ray diffraction and the surface morphologies were observed by field emission scanning electron microscopy. The effects of Mn contents on the microstructures and dielectric properties of BNTM films are investigated in detail. Among these BNTM films, it is found that the BNTM01 (x=0.01) film exhibits the highest dielectric tunability and dielectric constant but the lowest dielectric loss. Compared with BNT film, the BNTM01 film has lower leakage current density. Eventually, the mechanism involved in the Mn doping effect on the electrical properties of the BNT films is discussed.