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Evidence of Valence Band Perturbations in GaAsN/GaAs(001): Combined Variable-Angle Spectroscopic Ellipsometry and Modulated Photoreflectance Investigation

Physical Review B(2009)

引用 11|浏览1
关键词
absorption coefficients,conduction bands,dielectric function,ellipsometry,gallium arsenide,gallium compounds,III-V semiconductors,oscillator strengths,photoreflectance,semiconductor epitaxial layers,valence bands
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